Technische Details BC369,112 NXP
Description: TRANS PNP 20V 1A TO-92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V, Frequency - Transition: 140MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 830 mW.
Weitere Produktangebote BC369,112
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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BC369,112 | NXP USA Inc. |
 Description: TRANS PNP 20V 1A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 140MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 830 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BC369,112 | onsemi |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BC369,112 |
|
Hersteller: NXP USA Inc.
Description: TRANS PNP 20V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 830 mW
Description: TRANS PNP 20V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 830 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC369,112 |
|
Hersteller: onsemi
Bipolar Transistors - BJT
Bipolar Transistors - BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH