BC635-16,126 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: TRANS NPN 45V 1A TO-92-3
Power - Max: 830 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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Technische Details BC635-16,126 NXP USA Inc.
Description: TRANS NPN 45V 1A TO-92-3, Power - Max: 830 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 1 A, Part Status: Obsolete, Supplier Device Package: TO-92-3, Frequency - Transition: 180MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB).
Weitere Produktangebote BC635-16,126
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| BC635-16,126 | ROHM Semiconductor |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BC635-16,126 |
|
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT
Bipolar Transistors - BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH