BCW61C/DG/B2215 NXP USA Inc.
Hersteller: NXP USA Inc.Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 250 mW
auf Bestellung 117000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15000+ | 0.03 EUR |
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Technische Details BCW61C/DG/B2215 NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Part Status: Active, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA, Current - Collector Cutoff (Max): 20nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SOT23-3 (TO-236), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 250 mW.
Weitere Produktangebote BCW61C/DG/B2215
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BCW61C/DG/B2215 | Hersteller : NXP |
Description: NXP - BCW61C/DG/B2215 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 117000 Stücke: Lieferzeit 14-21 Tag (e) |