BD13616S Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: TRANS PNP 45V 1.5A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
auf Bestellung 1238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1238+ | 0.50 EUR |
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Technische Details BD13616S Fairchild Semiconductor
Description: TRANS PNP 45V 1.5A TO-126-3, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V, Supplier Device Package: TO-126-3, Part Status: Active, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 1.25 W.
Weitere Produktangebote BD13616S nach Preis ab 0.39 EUR bis 1.64 EUR
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BD13616S | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT PNP Epitaxial Sil |
auf Bestellung 1773 Stücke: Lieferzeit 10-14 Tag (e) |
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BD13616S | Hersteller : onsemi |
Description: TRANS PNP 45V 1.5A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.25 W |
auf Bestellung 1884 Stücke: Lieferzeit 10-14 Tag (e) |
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| BD13616S | Hersteller : Fairchild/ON Semiconductor |
Транзистор PNP; Uceo, В = 45; Ic = 1,5 мА; hFE = 100 @ 150 мA, 2 В; Icutoff-max = 100 нА; Uceo(sat), В @ Ic, Ib = 0,5 @ 50 мA, 500 мA; Р, Вт = 1,25 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-126-3 |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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| BD13616S | Hersteller : ONSEMI |
Description: ONSEMI - BD13616S - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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BD13616S | Hersteller : ON Semiconductor |
Trans GP BJT PNP 45V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Bag |
Produkt ist nicht verfügbar |
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BD13616S | Hersteller : ON Semiconductor |
Trans GP BJT PNP 45V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Bag |
Produkt ist nicht verfügbar |