Technische Details BD13910S ON Semiconductor
Description: TRANS NPN 80V 1.5A TO-126-3, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Supplier Device Package: TO-126-3, Part Status: Active, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1.25 W.
Weitere Produktangebote BD13910S nach Preis ab 0.48 EUR bis 2.14 EUR
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BD13910S | ON Semiconductor |
 Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin TO-126 Bag |
auf Bestellung 6999 Stücke: Lieferzeit 14-21 Tag (e) |
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BD13910S | Fairchild Semiconductor |
Description: TRANS NPN 80V 1.5A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.25 W |
auf Bestellung 3082 Stücke: Lieferzeit 10-14 Tag (e) |
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BD13910S | onsemi |
Description: TRANS NPN 80V 1.5A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.25 W |
auf Bestellung 1694 Stücke: Lieferzeit 10-14 Tag (e) |
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BD13910S | onsemi |
Bipolar Transistors - BJT NPN Epitaxial Sil |
auf Bestellung 86 Stücke: Lieferzeit 10-14 Tag (e) |
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| BD13910S |
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Hersteller: ON Semiconductor
Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin TO-126 Bag
Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin TO-126 Bag
auf Bestellung 6999 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1253+ | 0.52 EUR |
| BD13910S |
|
Hersteller: Fairchild Semiconductor
Description: TRANS NPN 80V 1.5A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Description: TRANS NPN 80V 1.5A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
auf Bestellung 3082 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 826+ | 0.64 EUR |
| BD13910S |
|
Hersteller: onsemi
Description: TRANS NPN 80V 1.5A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
Description: TRANS NPN 80V 1.5A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
auf Bestellung 1694 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 826+ | 0.64 EUR |
| BD13910S |
|
Hersteller: onsemi
Bipolar Transistors - BJT NPN Epitaxial Sil
Bipolar Transistors - BJT NPN Epitaxial Sil
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.14 EUR |
| 10+ | 1.32 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.6 EUR |
| 2000+ | 0.52 EUR |
| 4000+ | 0.48 EUR |