Technische Details BD239BTU ON Semiconductor
Description: TRANS NPN 80V 2A TO-220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A, Current - Collector Cutoff (Max): 300µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V, Supplier Device Package: TO-220-3, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 30 W.
Weitere Produktangebote BD239BTU nach Preis ab 0.49 EUR bis 2.23 EUR
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BD239BTU | Fairchild Semiconductor |
 Description: TRANS NPN 80V 2A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
auf Bestellung 975 Stücke: Lieferzeit 10-14 Tag (e) |
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BD239BTU | onsemi |
Bipolar Transistors - BJT NPN Epitaxial Sil |
auf Bestellung 278 Stücke: Lieferzeit 10-14 Tag (e) |
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| BD239BTU |
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Hersteller: Fairchild Semiconductor
Description: TRANS NPN 80V 2A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: TRANS NPN 80V 2A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 801+ | 0.67 EUR |
| BD239BTU |
|
Hersteller: onsemi
Bipolar Transistors - BJT NPN Epitaxial Sil
Bipolar Transistors - BJT NPN Epitaxial Sil
auf Bestellung 278 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.23 EUR |
| 10+ | 1.37 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.61 EUR |
| 2000+ | 0.55 EUR |
| 5000+ | 0.49 EUR |