BD243BTU ON Semiconductor
auf Bestellung 1147 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 765+ | 0.72 EUR |
| 1000+ | 0.64 EUR |
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Technische Details BD243BTU ON Semiconductor
Description: TRANS NPN 80V 6A TO-220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 6A, Current - Collector Cutoff (Max): 700µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V, Supplier Device Package: TO-220-3, Part Status: Active, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 65 W.
Weitere Produktangebote BD243BTU nach Preis ab 0.64 EUR bis 0.83 EUR
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BD243BTU | Hersteller : ON Semiconductor |
 Trans GP BJT NPN 80V 6A 65000mW 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 877 Stücke: Lieferzeit 14-21 Tag (e) |
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BD243BTU | Hersteller : ON Semiconductor |
Trans GP BJT NPN 80V 6A 65000mW 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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BD243BTU | Hersteller : ON Semiconductor |
Trans GP BJT NPN 80V 6A 65000mW 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1950 Stücke: Lieferzeit 14-21 Tag (e) |
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BD243BTU | Hersteller : Fairchild Semiconductor |
Description: TRANS NPN 80V 6A TO-220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 65 W |
auf Bestellung 3127 Stücke: Lieferzeit 10-14 Tag (e) |
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BD243BTU | Hersteller : onsemi |
Description: TRANS NPN 80V 6A TO-220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 65 W |
auf Bestellung 189193 Stücke: Lieferzeit 10-14 Tag (e) |
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BD243BTU | Hersteller : ON Semiconductor / Fairchild |
Bipolar Transistors - BJT NPN Epitaxial Sil |
auf Bestellung 464 Stücke: Lieferzeit 10-14 Tag (e) |
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| BD243BTU | Hersteller : ONSEMI |
Description: ONSEMI - BD243BTU - BD243BTU, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 3127 Stücke: Lieferzeit 14-21 Tag (e) |
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BD243BTU | Hersteller : ON Semiconductor |
Trans GP BJT NPN 80V 6A 65000mW 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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BD243BTU | Hersteller : onsemi |
Description: TRANS NPN 80V 6A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 65 W |
Produkt ist nicht verfügbar |