BD676AS Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: TRANS PNP DARL 45V 4A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 14 W
Description: TRANS PNP DARL 45V 4A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 14 W
auf Bestellung 9711 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
987+ | 0.72 EUR |
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Technische Details BD676AS Fairchild Semiconductor
Description: TRANS PNP DARL 45V 4A TO126-3, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A, Current - Collector Cutoff (Max): 500µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V, Supplier Device Package: TO-126-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 14 W.
Weitere Produktangebote BD676AS
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
BD676AS | Hersteller : ON Semiconductor | Trans Darlington PNP 45V 4A 14000mW 3-Pin(3+Tab) TO-126 Bag |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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BD676AS | Hersteller : ON Semiconductor / Fairchild | Darlington Transistors PNP Epitaxial Sil |
auf Bestellung 1227 Stücke: Lieferzeit 14-28 Tag (e) |
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BD676AS | Hersteller : ONSEMI |
Description: ONSEMI - BD676AS - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 9711 Stücke: Lieferzeit 14-21 Tag (e) |
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BD676AS | Hersteller : ON Semiconductor | Trans Darlington PNP 45V 4A 14000mW 3-Pin(3+Tab) TO-126 Bag |
Produkt ist nicht verfügbar |
||
BD676AS | Hersteller : onsemi |
Description: TRANS PNP DARL 45V 4A TO126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 14 W |
Produkt ist nicht verfügbar |