BD681S Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: TRANS NPN DARL 100V 4A TO-126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 40 W
| Anzahl | Preis |
|---|---|
| 219+ | 2.05 EUR |
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Technische Details BD681S Fairchild Semiconductor
Description: TRANS NPN DARL 100V 4A TO-126-3, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A, Current - Collector Cutoff (Max): 500µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V, Supplier Device Package: TO-126-3, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 40 W.
Weitere Produktangebote BD681S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BD681S | Hersteller : ONSEMI |
Description: ONSEMI - BD681S - TRANSISTOR, BIPOL, NPN, 100V, TO-126-3 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1250 Stücke: Lieferzeit 14-21 Tag (e) |
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| BD681S | Hersteller : ONS/FAI |
NPN Дарлингтон, Uкэ=100V, Iк=4A (6 имп.), h21=750, 40Вт, (комплементарный BD682) Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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BD681S | Hersteller : onsemi |
Description: TRANS NPN DARL 100V 4A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 40 W |
Produkt ist nicht verfügbar |
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BD681S | Hersteller : onsemi |
Darlington Transistors NPN Epitaxial Sil |
Produkt ist nicht verfügbar |
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BD681S | Hersteller : ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 4A; 40W; TO126ISO Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 40W Case: TO126ISO Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |
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BD681S | Hersteller : ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 4A; 40W; TO126ISO Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 40W Case: TO126ISO Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |