BF1202R,215 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF MOSFET 5V SOT143R
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Frequency: 400MHz
Configuration: N-Channel Dual Gate
Power - Output: 200mW
Gain: 30.5dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 0.9dB
Supplier Device Package: SOT-143R
Part Status: Obsolete
Voltage - Rated: 10 V
Voltage - Test: 5 V
Current - Test: 12 mA
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Technische Details BF1202R,215 NXP USA Inc.
Description: RF MOSFET 5V SOT143R, Supplier Device Package: SOT-143R, Noise Figure: 0.9dB, Technology: MOSFET (Metal Oxide), Gain: 30.5dB, Power - Output: 200mW, Configuration: N-Channel Dual Gate, Frequency: 400MHz, Current Rating (Amps): 30mA, Package / Case: TO-253-4, TO-253AA, Packaging: Tape & Reel (TR), Current - Test: 12 mA, Voltage - Test: 5 V, Voltage - Rated: 10 V, Part Status: Obsolete.
Weitere Produktangebote BF1202R,215
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BF1202R,215 | NXP Semiconductors |
RF MOSFET Transistors Dual N-Channel 10V 30mA 200mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BF1202R,215 |
|
Hersteller: NXP Semiconductors
RF MOSFET Transistors Dual N-Channel 10V 30mA 200mW
RF MOSFET Transistors Dual N-Channel 10V 30mA 200mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)