BFG10W/X,115 NXP USA Inc.
Hersteller: NXP USA Inc.Description: RF TRANS NPN 10V 1.9GHZ 4SO
Packaging: Bulk
Package / Case: SOT-343 Reverse Pinning
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 1.9GHz
Supplier Device Package: 4-SO
auf Bestellung 8162 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 533+ | 0.92 EUR |
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Technische Details BFG10W/X,115 NXP USA Inc.
Description: RF TRANS NPN 10V 1.9GHZ 4SO, Packaging: Tape & Reel (TR), Package / Case: SOT-343 Reverse Pinning, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Power - Max: 400mW, Current - Collector (Ic) (Max): 250mA, Voltage - Collector Emitter Breakdown (Max): 10V, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V, Frequency - Transition: 1.9GHz, Supplier Device Package: 4-SO.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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BFG10W/X,115 | Hersteller : NXP Semiconductors |
Trans RF BJT NPN 10V 0.25A 400mW 4-Pin(3+Tab) SO T/R |
Produkt ist nicht verfügbar |
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BFG10W/X,115 | Hersteller : NXP USA Inc. |
Description: RF TRANS NPN 10V 1.9GHZ 4SO Packaging: Tape & Reel (TR) Package / Case: SOT-343 Reverse Pinning Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 250mA Voltage - Collector Emitter Breakdown (Max): 10V DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Frequency - Transition: 1.9GHz Supplier Device Package: 4-SO |
Produkt ist nicht verfügbar |