BFG25A/X,215 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: RF TRANS NPN 5V 5GHZ SOT-143B
Supplier Device Package: SOT-143B
Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
Frequency - Transition: 5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
Voltage - Collector Emitter Breakdown (Max): 5V
Current - Collector (Ic) (Max): 6.5mA
Power - Max: 32mW
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
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Technische Details BFG25A/X,215 NXP USA Inc.
Description: RF TRANS NPN 5V 5GHZ SOT-143B, Supplier Device Package: SOT-143B, Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz, Frequency - Transition: 5GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V, Voltage - Collector Emitter Breakdown (Max): 5V, Current - Collector (Ic) (Max): 6.5mA, Power - Max: 32mW, Operating Temperature: 175°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-253-4, TO-253AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote BFG25A/X,215
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BFG25A/X,215 | Hersteller : NXP USA Inc. |
Description: RF TRANS NPN 5V 5GHZ SOT-143B Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 32mW Current - Collector (Ic) (Max): 6.5mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz Supplier Device Package: SOT-143B |
Produkt ist nicht verfügbar |
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BFG25A/X,215 | Hersteller : NXP Semiconductors |
RF Bipolar Transistors TAPE-7 TNS-RFSS |
Produkt ist nicht verfügbar |