BFP 740FESD H6327 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 197+ | 0.88 EUR |
| 250+ | 0.83 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.75 EUR |
| 2500+ | 0.71 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BFP 740FESD H6327 Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN, Packaging: Bulk, Package / Case: 4-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 39dB, Power - Max: 160mW, Current - Collector (Ic) (Max): 45mA, Voltage - Collector Emitter Breakdown (Max): 4.2V, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V, Frequency - Transition: 47GHz, Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz, Supplier Device Package: 4-TSFP, Part Status: Active.
Weitere Produktangebote BFP 740FESD H6327 nach Preis ab 0.35 EUR bis 1.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BFP 740FESD H6327 | Infineon Technologies |
 RF Bipolar Transistors RF BI |
auf Bestellung 2685 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| BFP740FESDH6327 | Infineon Technologies |
Description: RF TRANSISTOR, X BAND, NPN Packaging: Bulk Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 39dB Power - Max: 160mW Current - Collector (Ic) (Max): 45mA Voltage - Collector Emitter Breakdown (Max): 4.2V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Frequency - Transition: 47GHz Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz Supplier Device Package: 4-TSFP Part Status: Active |
auf Bestellung 142641 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BFP 740FESD H6327 |
|
Hersteller: Infineon Technologies
RF Bipolar Transistors RF BI
RF Bipolar Transistors RF BI
auf Bestellung 2685 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.57 EUR |
| 10+ | 0.96 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.44 EUR |
| 3000+ | 0.38 EUR |
| 6000+ | 0.35 EUR |
| BFP740FESDH6327 |
|
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 39dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 4.2V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Description: RF TRANSISTOR, X BAND, NPN
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 39dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 4.2V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
Supplier Device Package: 4-TSFP
Part Status: Active
auf Bestellung 142641 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1610+ | 0.37 EUR |