BFR360L3E6765 Infineon Technologies
Hersteller: Infineon Technologies
Description: LOW-NOISE SI TRANSISTOR
Part Status: Active
Supplier Device Package: PG-TSLP-3-1
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Voltage - Collector Emitter Breakdown (Max): 9V
Current - Collector (Ic) (Max): 35mA
Power - Max: 210mW
Gain: 11.5dB ~ 16dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
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Technische Details BFR360L3E6765 Infineon Technologies
Description: LOW-NOISE SI TRANSISTOR, Part Status: Active, Supplier Device Package: PG-TSLP-3-1, Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz, Frequency - Transition: 14GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V, Voltage - Collector Emitter Breakdown (Max): 9V, Current - Collector (Ic) (Max): 35mA, Power - Max: 210mW, Gain: 11.5dB ~ 16dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Bulk.
Weitere Produktangebote BFR360L3E6765 nach Preis ab 0.18 EUR bis 0.47 EUR
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BFR 360L3 E6765 | Infineon Technologies |
RF Bipolar Transistors NPN Silicon RF Transistor |
auf Bestellung 29490 Stücke: Lieferzeit 10-14 Tag (e) |
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| BFR 360L3E6765 | Infineon Technologies |
Description: LOW-NOISE TRANSISTORPart Status: Active Supplier Device Package: PG-TSLP-3-1 Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz Frequency - Transition: 14GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V Voltage - Collector Emitter Breakdown (Max): 6V Current - Collector (Ic) (Max): 35mA Power - Max: 210mW Gain: 16dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Bulk |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| BFR360L3E6765 | Infineon technologies |
|
auf Bestellung 14800 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BFR 360L3 E6765 |
![]() |
Hersteller: Infineon Technologies
RF Bipolar Transistors NPN Silicon RF Transistor
RF Bipolar Transistors NPN Silicon RF Transistor
auf Bestellung 29490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.47 EUR |
| 10+ | 0.29 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.21 EUR |
| 2500+ | 0.2 EUR |
| 10000+ | 0.19 EUR |
| BFR 360L3E6765 |
![]() |
Hersteller: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Part Status: Active
Supplier Device Package: PG-TSLP-3-1
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Voltage - Collector Emitter Breakdown (Max): 6V
Current - Collector (Ic) (Max): 35mA
Power - Max: 210mW
Gain: 16dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
Description: LOW-NOISE TRANSISTOR
Part Status: Active
Supplier Device Package: PG-TSLP-3-1
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Frequency - Transition: 14GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Voltage - Collector Emitter Breakdown (Max): 6V
Current - Collector (Ic) (Max): 35mA
Power - Max: 210mW
Gain: 16dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3073+ | 0.18 EUR |
| BFR360L3E6765 |
![]() |
Hersteller: Infineon technologies
auf Bestellung 14800 Stücke:
Lieferzeit 21-28 Tag (e)


