BFR360L3E6765 Infineon Technologies
Hersteller: Infineon Technologies
Description: LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 3073+ | 0.21 EUR |
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Lieferzeit:
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Mindestmenge:
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Technische Details BFR360L3E6765 Infineon Technologies
Description: LOW-NOISE SI TRANSISTOR, Packaging: Bulk, Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 11.5dB ~ 16dB, Power - Max: 210mW, Current - Collector (Ic) (Max): 35mA, Voltage - Collector Emitter Breakdown (Max): 9V, DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V, Frequency - Transition: 14GHz, Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz, Supplier Device Package: PG-TSLP-3-1, Part Status: Active.
Weitere Produktangebote BFR360L3E6765 nach Preis ab 0.21 EUR bis 0.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BFR 360L3 E6765 | Infineon Technologies |
RF Bipolar Transistors NPN Silicon RF Transistor |
auf Bestellung 22508 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| BFR 360L3E6765 | Infineon Technologies |
Description: LOW-NOISE TRANSISTOR Packaging: Bulk Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 16dB Power - Max: 210mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz Supplier Device Package: PG-TSLP-3-1 Part Status: Active |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BFR 360L3 E6765 |
|
Hersteller: Infineon Technologies
RF Bipolar Transistors NPN Silicon RF Transistor
RF Bipolar Transistors NPN Silicon RF Transistor
auf Bestellung 22508 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.56 EUR |
| 10+ | 0.35 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.25 EUR |
| 2500+ | 0.24 EUR |
| 10000+ | 0.23 EUR |
| BFR 360L3E6765 |
|
Hersteller: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 16dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3073+ | 0.21 EUR |