BFU768F115 NXP
Hersteller: NXP
Description: NXP - BFU768F115 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details BFU768F115 NXP
Description: NPN WIDEBAND SILICON GERMANIUM R, Packaging: Bulk, Package / Case: SOT-343F, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 13.1dB, Power - Max: 220mW, Current - Collector (Ic) (Max): 70mA, Voltage - Collector Emitter Breakdown (Max): 2.8V, DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V, Noise Figure (dB Typ @ f): 1.1dB @ 2.4GHz, Supplier Device Package: 4-DFP, Part Status: Active.
Weitere Produktangebote BFU768F115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
BFU768F115 | NXP USA Inc. |
Description: NPN WIDEBAND SILICON GERMANIUM R Packaging: Bulk Package / Case: SOT-343F Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13.1dB Power - Max: 220mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 2.8V DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V Noise Figure (dB Typ @ f): 1.1dB @ 2.4GHz Supplier Device Package: 4-DFP Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BFU768F115 |
|
Hersteller: NXP USA Inc.
Description: NPN WIDEBAND SILICON GERMANIUM R
Packaging: Bulk
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.1dB
Power - Max: 220mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V
Noise Figure (dB Typ @ f): 1.1dB @ 2.4GHz
Supplier Device Package: 4-DFP
Part Status: Active
Description: NPN WIDEBAND SILICON GERMANIUM R
Packaging: Bulk
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.1dB
Power - Max: 220mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V
Noise Figure (dB Typ @ f): 1.1dB @ 2.4GHz
Supplier Device Package: 4-DFP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH