BSH112,235 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 60V 300MA TO236AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 830mW (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
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Technische Details BSH112,235 NXP USA Inc.
Description: MOSFET N-CH 60V 300MA TO236AB, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 830mW (Tc), Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: SOT-23 (TO-236AB).
Weitere Produktangebote BSH112,235
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BSH112,235 | NXP USA Inc. |
Description: MOSFET N-CH 60V 300MA TO236AB Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: SOT-23 (TO-236AB) Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 830mW (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BSH112,235 | Nexperia |
 MOSFET TAPE13 PWR-MO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSH112,235 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 60V 300MA TO236AB
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 830mW (Tc)
Description: MOSFET N-CH 60V 300MA TO236AB
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23 (TO-236AB)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 830mW (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSH112,235 |
|
Hersteller: Nexperia
MOSFET TAPE13 PWR-MO
MOSFET TAPE13 PWR-MO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH