BSM25GB120DN2 Infineon Technologies

Description: IGBT MODULE, Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V, Current - Collector Cutoff (Max): 800 µA, Power - Max: 200 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 38 A, Part Status: Active, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A, Operating Temperature: 150°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.