BSS670S2L
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auf Bestellung 8639 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details BSS670S2L
Description: MOSFET N-CH 55V 540MA SOT23-3, Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V, Current - Continuous Drain (Id) @ 25°C: 540mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-SOT23, Vgs(th) (Max) @ Id: 2V @ 2.7µA, Power Dissipation (Max): 360mW (Ta).
Weitere Produktangebote BSS670S2L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BSS670S2L | Infineon Technologies |
Description: MOSFET N-CH 55V 540MA SOT23-3 Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-SOT23 Vgs(th) (Max) @ Id: 2V @ 2.7µA Power Dissipation (Max): 360mW (Ta) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
BSS670S2L | Infineon Technologies |
Description: MOSFET N-CH 55V 540MA SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-SOT23 Vgs(th) (Max) @ Id: 2V @ 2.7µA Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSS670S2L |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 540MA SOT23-3
Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 2V @ 2.7µA
Power Dissipation (Max): 360mW (Ta)
Description: MOSFET N-CH 55V 540MA SOT23-3
Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 2V @ 2.7µA
Power Dissipation (Max): 360mW (Ta)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSS670S2L |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 540MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 2V @ 2.7µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 55V 540MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 2V @ 2.7µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH