BSS84AKW/DG/B2215 NXP
Hersteller: NXP
Description: NXP - BSS84AKW/DG/B2215 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
euEccn: NLR
hazardous: false
rohsCompliant: YES
productTraceability: No
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details BSS84AKW/DG/B2215 NXP
Description: P-CHANNEL MOSFET, Part Status: Active, Packaging: Bulk, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 350 pC @ 5 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 260mW (Ta), 830mW (Tc), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V, Current - Continuous Drain (Id) @ 25°C: 150mA (Ta), FET Type: P-Channel, Supplier Device Package: SOT-323, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323.
Weitere Produktangebote BSS84AKW/DG/B2215
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
BSS84AKW/DG/B2215 | NXP USA Inc. |
Description: P-CHANNEL MOSFET Part Status: Active Packaging: Bulk Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 350 pC @ 5 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) FET Type: P-Channel Supplier Device Package: SOT-323 Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSS84AKW/DG/B2215 |
|
Hersteller: NXP USA Inc.
Description: P-CHANNEL MOSFET
Part Status: Active
Packaging: Bulk
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 350 pC @ 5 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: P-Channel
Supplier Device Package: SOT-323
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Description: P-CHANNEL MOSFET
Part Status: Active
Packaging: Bulk
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 350 pC @ 5 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 260mW (Ta), 830mW (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: P-Channel
Supplier Device Package: SOT-323
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH