BUK652R3-40C,127 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 224+ | 2.19 EUR |
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Technische Details BUK652R3-40C,127 NXP USA Inc.
Description: MOSFET N-CH 40V 120A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 306W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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BUK652R3-40C,127 | Hersteller : Nexperia |
MOSFET N-CHAN 40V 120A |
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| BUK652R3-40C,127 | Hersteller : NXP Semiconductors |
NXP Semiconductors |
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