BUK7108-40AIE,118 NXP USA Inc.

Description: PFET, 75A I(D), 40V, 0.008OHM, 1, Packaging: Bulk, Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V, FET Feature: Current Sensing, Power Dissipation (Max): 221W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SOT-426, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3140 pF @ 25 V, Qualification: AEC-Q101.