BUK7609-55A,118 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3271 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 0 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details BUK7609-55A,118 NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 3271 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 0 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 211W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote BUK7609-55A,118
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BUK7609-55A,118 | NXP USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 3271 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 0 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 211W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BUK7609-55A,118 | Nexperia |
 MOSFET Trans MOSFET N-CH 55V 108A 3pin(3+Tab) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BUK7609-55A,118 |
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3271 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 0 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3271 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 0 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7609-55A,118 |
|
Hersteller: Nexperia
MOSFET Trans MOSFET N-CH 55V 108A 3pin(3+Tab)
MOSFET Trans MOSFET N-CH 55V 108A 3pin(3+Tab)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH