Technische Details BUK764R2-80E,118 NXP USA Inc.
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 713A; 324W, Gate-source voltage: ±20V, Drain-source voltage: 80V, Drain current: 120A, Power dissipation: 324W, Pulsed drain current: 713A, Application: automotive industry, Case: D2PAK; SOT404, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: reel; tape, Mounting: SMD, Polarisation: unipolar, Gate charge: 136nC, On-state resistance: 10.2mΩ.
Weitere Produktangebote BUK764R2-80E,118
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BUK764R2-80E,118 | Hersteller : Nexperia |
 MOSFETs BUK764R2-80E/SOT404/D2PAK |
Produkt ist nicht verfügbar |
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| BUK764R2-80E,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 713A; 324W Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 120A Power dissipation: 324W Pulsed drain current: 713A Application: automotive industry Case: D2PAK; SOT404 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 136nC On-state resistance: 10.2mΩ |
Produkt ist nicht verfügbar |