BUK7880-55,135 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 3.5A SOT223
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 1268+ | 0.41 EUR |
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Technische Details BUK7880-55,135 NXP USA Inc.
Description: MOSFET N-CH 55V 3.5A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SC-73, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V, Qualification: AEC-Q101.
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BUK7880-55,135 | Hersteller : NXP USA Inc. |
Description: MOSFET N-CH 55V 3.5A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SC-73 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Qualification: AEC-Q101 |
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