BUK9535-55,127 NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 55V 34A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 5V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details BUK9535-55,127 NXP USA Inc.
Description: MOSFET N-CH 55V 34A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 85W (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 17A, 5V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote BUK9535-55,127
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BUK9535-55,127 | Hersteller : NXP Semiconductors |
MOSFET BUK9535-55/SOT78/RAILH// |
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