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Lieferzeit 612-616 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.28 EUR |
| 10+ | 4.77 EUR |
| 100+ | 3.89 EUR |
| 500+ | 3.31 EUR |
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Technische Details BUK954R8-60E,127 Nexperia
Description: MOSFET N-CH 60V 100A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V, Power Dissipation (Max): 234W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V.
Weitere Produktangebote BUK954R8-60E,127
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BUK954R8-60E,127 Produktcode: 158439
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 Transistoren > MOSFET N-CH |
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BUK954R8-60E,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 60V 100A Automotive 3-Pin(3+Tab) TO-220AB Rail |
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BUK954R8-60E,127 | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK954R8-60E,127 - MOSFET MSL: MSL 1 - unbegrenzt SVHC: No SVHC (10-Jun-2022) |
Produkt ist nicht verfügbar |
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BUK954R8-60E,127 | Hersteller : NXP USA Inc. |
Description: MOSFET N-CH 60V 100A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V |
Produkt ist nicht verfügbar |
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BUK954R8-60E,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 25 V |
Produkt ist nicht verfügbar |