
BUK9C1R3-40EJ NXP USA Inc.
Hersteller: NXP USA Inc.
Description: MOSFET N-CH 40V 190A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 90A, 5V
Supplier Device Package: D2PAK-7
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
Description: MOSFET N-CH 40V 190A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 90A, 5V
Supplier Device Package: D2PAK-7
Part Status: Active
Drain to Source Voltage (Vdss): 40 V
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Technische Details BUK9C1R3-40EJ NXP USA Inc.
Description: MOSFET N-CH 40V 190A D2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 190A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 90A, 5V, Supplier Device Package: D2PAK-7, Part Status: Active, Drain to Source Voltage (Vdss): 40 V.
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BUK9C1R3-40EJ | Hersteller : Nexperia |
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