C2M0280120D

Hersteller: Wolfspeed
SiC MOSFETs SIC MOSFET 1200V RDS ON 280 mOhm

Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 10A TO247-3
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 259 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ)
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 6A, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)

Hersteller: CREE
N-MOSFET 1200V 10A C2M0280120D Wolfspeed TC2M0280120D
Anzahl je Verpackung: 2 Stücke

Hersteller: WOLFSPEED
Description: WOLFSPEED - C2M0280120D - Siliziumkarbid-MOSFET, Eins, n-Kanal, 10 A, 1.2 kV, 0.28 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 10A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.8V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 62.5W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.28ohm
SVHC: No SVHC (17-Dec-2015)