C3M0120065D
Produktcode: 178862
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Weitere Produktangebote C3M0120065D nach Preis ab 9.95 EUR bis 17.06 EUR
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C3M0120065D | Wolfspeed |
MOSFET SiC, MOSFET, 120mohm, 650V, TO-247-3, Industrial |
auf Bestellung 1475 Stücke: Lieferzeit 10-14 Tag (e) |
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C3M0120065D | Wolfspeed, Inc. |
Description: 650V 120M SIC MOSFET Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1.86mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V |
auf Bestellung 485 Stücke: Lieferzeit 10-14 Tag (e) |
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| C3M0120065D |
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Hersteller: Wolfspeed
MOSFET SiC, MOSFET, 120mohm, 650V, TO-247-3, Industrial
MOSFET SiC, MOSFET, 120mohm, 650V, TO-247-3, Industrial
auf Bestellung 1475 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.24 EUR |
| 10+ | 13.78 EUR |
| 30+ | 12.27 EUR |
| 120+ | 11.38 EUR |
| 270+ | 11.08 EUR |
| 510+ | 9.95 EUR |
| C3M0120065D |
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Hersteller: Wolfspeed, Inc.
Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
Description: 650V 120M SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.06 EUR |
| 10+ | 13.27 EUR |
| 30+ | 12.16 EUR |
| 120+ | 11.16 EUR |
| 270+ | 10.75 EUR |