DB101G GeneSiC Semiconductor
| Anzahl | Preis |
|---|---|
| 2+ | 1.97 EUR |
| 10+ | 1.16 EUR |
| 25+ | 0.94 EUR |
| 100+ | 0.68 EUR |
| 250+ | 0.55 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.4 EUR |
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Technische Details DB101G GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 1A DB, Packaging: Bulk, Package / Case: 4-EDIP (0.321", 8.15mm), Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: DB, Part Status: Obsolete, Voltage - Peak Reverse (Max): 50 V, Current - Average Rectified (Io): 1 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V.
Weitere Produktangebote DB101G nach Preis ab 0.4 EUR bis 1.97 EUR
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| DB101G | Hersteller : GeneSiC Semiconductor |
 Description: BRIDGE RECT 1PHASE 50V 1A DBCurrent - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Average Rectified (Io): 1 A Voltage - Peak Reverse (Max): 50 V Part Status: Active Supplier Device Package: DB Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Packaging: Bulk |
auf Bestellung 2440 Stücke: Lieferzeit 10-14 Tag (e) |
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