| Anzahl | Preis |
|---|---|
| 3+ | 1.27 EUR |
| 10+ | 0.78 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.34 EUR |
| 2500+ | 0.31 EUR |
| 5000+ | 0.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DB103-G Comchip Technology
Description: BRIDGE RECT 1PHASE 200V 1A DB, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Average Rectified (Io): 1 A, Voltage - Peak Reverse (Max): 200 V, Part Status: Active, Supplier Device Package: DB, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-EDIP (0.321", 8.15mm), Packaging: Bulk.
Weitere Produktangebote DB103-G nach Preis ab 0.4 EUR bis 1.97 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DB103G | Hersteller : GeneSiC Semiconductor |
 Bridge Rectifiers SI BRIDGE RECT DB-PK 50-1000V 1A200P/140 |
auf Bestellung 5972 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
DB103G | Hersteller : GeneSiC Semiconductor |
Description: BRIDGE RECT 1PHASE 200V 1A DB Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Average Rectified (Io): 1 A Voltage - Peak Reverse (Max): 200 V Part Status: Active Supplier Device Package: DB Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-EDIP (0.321", 8.15mm) Packaging: Bulk |
auf Bestellung 311 Stücke: Lieferzeit 10-14 Tag (e) |
|