Technische Details DME500 MICROSEMI
Description: RF TRANS NPN 55V 1.15GHZ 55KT, Packaging: Bulk, Package / Case: 55KT, Mounting Type: Chassis Mount, Transistor Type: NPN, Operating Temperature: 200°C (TJ), Gain: 6dB ~ 6.5dB, Power - Max: 1700W, Current - Collector (Ic) (Max): 40A, Voltage - Collector Emitter Breakdown (Max): 55V, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V, Frequency - Transition: 1.025GHz ~ 1.15GHz, Supplier Device Package: 55KT, Part Status: Obsolete.
Weitere Produktangebote DME500
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DME500 | Hersteller : Microsemi Corporation |
 Description: RF TRANS NPN 55V 1.15GHZ 55KTPackaging: Bulk Package / Case: 55KT Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 6dB ~ 6.5dB Power - Max: 1700W Current - Collector (Ic) (Max): 40A Voltage - Collector Emitter Breakdown (Max): 55V DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Frequency - Transition: 1.025GHz ~ 1.15GHz Supplier Device Package: 55KT Part Status: Obsolete |
Produkt ist nicht verfügbar |
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| DME500 | Hersteller : Microsemi |
RF Bipolar Transistors Bipolar/LDMOS Transistor |
Produkt ist nicht verfügbar |