DTC123JUAT106 Rohm Semiconductor
auf Bestellung 35839 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2674+ | 0.06 EUR |
| 3323+ | 0.04 EUR |
| 3774+ | 0.04 EUR |
| 6000+ | 0.04 EUR |
| 24000+ | 0.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DTC123JUAT106 Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: UMT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote DTC123JUAT106 nach Preis ab 0.07 EUR bis 0.40 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DTC123JUAT106 | Hersteller : Rohm Semiconductor |
 Description: TRANS PREBIAS NPN 200MW UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
DTC123JUAT106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW UMT3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: UMT3 Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 5767 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| DTC123JUA T106 | Hersteller : ROHM | SOT23 |
auf Bestellung 315 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
| DTC123JUA T106 | Hersteller : ROHM | SOT23/SOT323 |
auf Bestellung 2569 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
 |
DTC123JUAT106 | Hersteller : ROHM Semiconductor |
Digital Transistors NPN 50V 100MA SOT-323 |
Produkt ist nicht verfügbar |