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DTC123JUAT106

DTC123JUAT106 Rohm Semiconductor


dtc123jmt2l-e.pdf Hersteller: Rohm Semiconductor
Trans Digital BJT NPN 50V 100mA 3-Pin UMT T/R
auf Bestellung 44024 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3145+0.05 EUR
3165+ 0.048 EUR
3585+ 0.04 EUR
3760+ 0.037 EUR
6000+ 0.034 EUR
12000+ 0.032 EUR
24000+ 0.029 EUR
Mindestbestellmenge: 3145
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Technische Details DTC123JUAT106 Rohm Semiconductor

Description: TRANS PREBIAS NPN 200MW UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: UMT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

Weitere Produktangebote DTC123JUAT106 nach Preis ab 0.069 EUR bis 0.4 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DTC123JUAT106 DTC123JUAT106 Hersteller : Rohm Semiconductor datasheet?p=DTC123JUA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.069 EUR
Mindestbestellmenge: 3000
DTC123JUAT106 DTC123JUAT106 Hersteller : Rohm Semiconductor datasheet?p=DTC123JUA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5767 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
44+0.4 EUR
63+ 0.28 EUR
129+ 0.14 EUR
500+ 0.11 EUR
1000+ 0.079 EUR
Mindestbestellmenge: 44
DTC123JUA T106 Hersteller : ROHM SOT23
auf Bestellung 315 Stücke:
Lieferzeit 21-28 Tag (e)
DTC123JUA T106 Hersteller : ROHM SOT23/SOT323
auf Bestellung 2569 Stücke:
Lieferzeit 21-28 Tag (e)
DTC123JUAT106 DTC123JUAT106 Hersteller : ROHM Semiconductor datasheet?p=DTC123JUA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Bipolar Transistors - Pre-Biased NPN 50V 100MA SOT-323
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