DTC123JUBTL Rohm Semiconductor
| Anzahl | Preis |
|---|---|
| 5883+ | 0.025 EUR |
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Technische Details DTC123JUBTL Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Not For New Designs, Supplier Device Package: UMT3F, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-85, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTC123JUBTL nach Preis ab 0.051 EUR bis 0.3 EUR
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DTC123JUBTL | Hersteller : Rohm Semiconductor |
 Trans Digital BJT NPN 50V 100mA 3-Pin UMTF T/R |
auf Bestellung 5884 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123JUBTL | Hersteller : ROHM Semiconductor |
Digital Transistors TRANS DIGI BJT NPN 100MA TR |
auf Bestellung 858 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC123JUBTL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3F Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: UMT3F DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Cut Tape (CT) |
auf Bestellung 2960 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTC123JUBTL | Hersteller : ROHM |
SOT23-3 |
auf Bestellung 7238 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTC123JUB TL | Hersteller : ROHM | SOT23/SOT323 |
auf Bestellung 11592 Stücke: Lieferzeit 21-28 Tag (e) |
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DTC123JUBTL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3F Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: UMT3F DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-85 Packaging: Tape & Reel (TR) |
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