
DTD113ZUT106 Rohm Semiconductor
auf Bestellung 41655 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
728+ | 0.20 EUR |
851+ | 0.17 EUR |
1000+ | 0.15 EUR |
2000+ | 0.14 EUR |
3000+ | 0.13 EUR |
6000+ | 0.12 EUR |
12000+ | 0.10 EUR |
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Technische Details DTD113ZUT106 Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V, Supplier Device Package: UMT3, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote DTD113ZUT106 nach Preis ab 0.23 EUR bis 1.00 EUR
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DTD113ZUT106 | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 5720 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD113ZUT106 | Hersteller : Rohm Semiconductor |
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auf Bestellung 20875 Stücke: Lieferzeit 14-21 Tag (e) |
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DTD113ZUT106 | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 5889 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD113ZUT106 | Hersteller : ROHM Semiconductor |
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auf Bestellung 24350 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD113ZU T106 | Hersteller : ROHM | 0239+ |
auf Bestellung 2400 Stücke: Lieferzeit 21-28 Tag (e) |
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DTD113ZU T106 | Hersteller : ROHM | SOT23/SOT323 |
auf Bestellung 1651 Stücke: Lieferzeit 21-28 Tag (e) |
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DTD113ZUT106 | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC70,SOT323; R1: 1kΩ Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SC70; SOT323 Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 82 Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.2W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DTD113ZUT106 | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC70,SOT323; R1: 1kΩ Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SC70; SOT323 Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 82 Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.2W |
Produkt ist nicht verfügbar |