DTD113ZUT106 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS PREBIAS NPN 50V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 5720 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.25 EUR |
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Technische Details DTD113ZUT106 Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V, Supplier Device Package: UMT3, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote DTD113ZUT106 nach Preis ab 0.24 EUR bis 1.14 EUR
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DTD113ZUT106 | Hersteller : Rohm Semiconductor |
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DTD113ZUT106 | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 500mA 3-Pin UMT T/R |
auf Bestellung 1710 Stücke: Lieferzeit 14-21 Tag (e) |
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DTD113ZUT106 | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 500mA 3-Pin UMT T/R |
auf Bestellung 10733 Stücke: Lieferzeit 14-21 Tag (e) |
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DTD113ZUT106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.5A UMT3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 5889 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD113ZUT106 | Hersteller : ROHM Semiconductor |
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DTD113ZUT106 | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC70,SOT323; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 82 Anzahl je Verpackung: 1 Stücke |
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DTD113ZUT106 | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SC70,SOT323; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 1kΩ Base-emitter resistor: 10kΩ Current gain: 82 |
Produkt ist nicht verfügbar |