E3D08065G Wolfspeed
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.38 EUR |
| 10+ | 7.03 EUR |
| 100+ | 5.7 EUR |
| 250+ | 5.38 EUR |
| 500+ | 5.07 EUR |
| 1000+ | 4.32 EUR |
| 2500+ | 4.08 EUR |
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Technische Details E3D08065G Wolfspeed
Description: DIODE SIL CARB 650V 22A TO263-2, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 369pF @ 0V, 1MHz, Current - Average Rectified (Io): 22A, Supplier Device Package: TO-263-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A, Current - Reverse Leakage @ Vr: 51 µA @ 650 V.
Weitere Produktangebote E3D08065G nach Preis ab 3.26 EUR bis 8.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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E3D08065G | Wolfspeed, Inc. |
 Description: DIODE SIL CARB 650V 22A TO263-2Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 369pF @ 0V, 1MHz Current - Average Rectified (Io): 22A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 51 µA @ 650 V |
auf Bestellung 489 Stücke: Lieferzeit 10-14 Tag (e) |
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| E3D08065G | Cree |
650 V 8 A Schottky Diode (Single Die) |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| E3D08065G |
|
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 22A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 369pF @ 0V, 1MHz
Current - Average Rectified (Io): 22A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
Description: DIODE SIL CARB 650V 22A TO263-2
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 369pF @ 0V, 1MHz
Current - Average Rectified (Io): 22A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 51 µA @ 650 V
auf Bestellung 489 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.59 EUR |
| 10+ | 7.7 EUR |
| 100+ | 6.31 EUR |
| E3D08065G |
|
Hersteller: Cree
650 V 8 A Schottky Diode (Single Die)
650 V 8 A Schottky Diode (Single Die)
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 3.68 EUR |
| 50+ | 3.51 EUR |
| 100+ | 3.26 EUR |