FCH041N65EFL4 onsemi / Fairchild

Description: MOSFET N-CH 650V 76A TO247, Input Capacitance (Ciss) (Max) @ Vds: 12560 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 298 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 5V @ 7.6mA, Power Dissipation (Max): 595W (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.