FCH077N65F-F085 onsemi / Fairchild
auf Bestellung 892 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.68 EUR |
| 10+ | 9.05 EUR |
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Technische Details FCH077N65F-F085 onsemi / Fairchild
Description: MOSFET N-CH 650V 54A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V, Power Dissipation (Max): 481W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote FCH077N65F-F085 nach Preis ab 8.66 EUR bis 13.73 EUR
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FCH077N65F-F085 | Hersteller : Fairchild Semiconductor |
 Description: MOSFET N-CH 650V 54A TO247-3Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 148 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH077N65F-F085 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 54A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V Power Dissipation (Max): 481W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 3524 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH077N65F-F085 | Hersteller : ONSEMI |
Description: ONSEMI - FCH077N65F-F085 - FCH077N65F-F085, SINGLE MOSFETS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCH077N65F-F085 | Hersteller : ON Semiconductor |
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auf Bestellung 3600 Stücke: Lieferzeit 21-28 Tag (e) |
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FCH077N65F-F085 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 54A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FCH077N65F-F085 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |