FCH125N60E Fairchild Semiconductor

Description: MOSFET N-CH 600V 29A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 380 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 278W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.