FCH35N60 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 600V 35A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 17.5A, 10V
Power Dissipation (Max): 312.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 6.09 EUR |
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Technische Details FCH35N60 Fairchild Semiconductor
Description: MOSFET N-CH 600V 35A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 17.5A, 10V, Power Dissipation (Max): 312.5W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V.
Weitere Produktangebote FCH35N60 nach Preis ab 5.77 EUR bis 10.31 EUR
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FCH35N60 | Hersteller : onsemi / Fairchild |
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auf Bestellung 158 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH35N60 | Hersteller : onsemi |
Description: MOSFET N-CH 600V 35A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 17.5A, 10V Power Dissipation (Max): 312.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V |
Produkt ist nicht verfügbar |