FCH76N60N Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 7
Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 543W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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Technische Details FCH76N60N Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 7, Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 543W (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.
Weitere Produktangebote FCH76N60N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FCH76N60N | onsemi |
Description: MOSFET N-CH 600V 76A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V Power Dissipation (Max): 543W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FCH76N60N | onsemi / Fairchild |
MOSFETs 600V N-Chan MOSFET SupreMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FCH76N60N |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V
Description: MOSFET N-CH 600V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH76N60N |
|
Hersteller: onsemi / Fairchild
MOSFETs 600V N-Chan MOSFET SupreMOS
MOSFETs 600V N-Chan MOSFET SupreMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH