FCH76N60NF

FCH76N60NF Fairchild Semiconductor


FAIRS46691-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 7
Rds On (Max) @ Id, Vgs: 38mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 72.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 11045 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 543W (Tc)
auf Bestellung 4944 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+22.25 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FCH76N60NF Fairchild Semiconductor

Description: POWER FIELD-EFFECT TRANSISTOR, 7, Rds On (Max) @ Id, Vgs: 38mOhm @ 38A, 10V, Current - Continuous Drain (Id) @ 25°C: 72.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 11045 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 543W (Tc).

Weitere Produktangebote FCH76N60NF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FCH76N60NF ONS/FAI FAIRS46691-1.pdf?t.download=true&u=5oefqw fch76n60nf-d.pdf MOSFET N-CH 600V 72.8A TO247-3 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH76N60NF FCH76N60NF onsemi fch76n60nf-d.pdf Description: MOSFET N-CH 600V 72.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72.8A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 38A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11045 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH76N60NF FCH76N60NF onsemi / Fairchild FCH76N60NF-D.PDF MOSFETs 600V N-Chan MOSFET FRFET, SupreMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH76N60NF FAIRS46691-1.pdf?t.download=true&u=5oefqw fch76n60nf-d.pdf
Hersteller: ONS/FAI
MOSFET N-CH 600V 72.8A TO247-3 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH76N60NF fch76n60nf-d.pdf
FCH76N60NF
Hersteller: onsemi
Description: MOSFET N-CH 600V 72.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72.8A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 38A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11045 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCH76N60NF FCH76N60NF-D.PDF
FCH76N60NF
Hersteller: onsemi / Fairchild
MOSFETs 600V N-Chan MOSFET FRFET, SupreMOS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH