FCPF1300N80ZYD ON Semiconductor
auf Bestellung 403 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
250+ | 0.63 EUR |
252+ | 0.6 EUR |
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Technische Details FCPF1300N80ZYD ON Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, N, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V, Power Dissipation (Max): 24W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 400µA, Supplier Device Package: TO-220F-3 (Y-Forming), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V.
Weitere Produktangebote FCPF1300N80ZYD nach Preis ab 0.75 EUR bis 1.72 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt | ||||
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FCPF1300N80ZYD | Hersteller : ON Semiconductor | Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220F Tube |
auf Bestellung 403 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF1300N80ZYD | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 800V 4A TO220F-3 Packaging: Bulk Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF1300N80ZYD | Hersteller : onsemi |
Description: POWER FIELD-EFFECT TRANSISTOR, N Packaging: Bulk Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V |
auf Bestellung 497 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF1300N80ZYD | Hersteller : ON Semiconductor / Fairchild | MOSFET SF2 800V 1.3OHM E TO220F |
auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF1300N80ZYD | Hersteller : ON Semiconductor | Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220F Tube |
Produkt ist nicht verfügbar |