FCPF4300N80Z ON Semiconductor
auf Bestellung 954 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 98+ | 1.59 EUR |
| 202+ | 0.72 EUR |
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Technische Details FCPF4300N80Z ON Semiconductor
Description: MOSFET N-CH 800V 1.6A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V, Power Dissipation (Max): 19.2W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 160µA, Supplier Device Package: TO-220F-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V.
Weitere Produktangebote FCPF4300N80Z nach Preis ab 1.85 EUR bis 5.69 EUR
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FCPF4300N80Z | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 800V 2.2A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 954 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF4300N80Z | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 800V 1.6A TO220F Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V Power Dissipation (Max): 19.2W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 160µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V |
auf Bestellung 931 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF4300N80Z | Hersteller : onsemi |
Description: MOSFET N-CH 800V 1.6A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V Power Dissipation (Max): 19.2W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 160µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V |
auf Bestellung 993 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF4300N80Z | Hersteller : onsemi / Fairchild |
MOSFET N-Channel SuperFET II MOSFET 800 V, 1.6 A, 4.3 O |
auf Bestellung 927 Stücke: Lieferzeit 14-28 Tag (e) |
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| FCPF4300N80Z | Hersteller : ONSEMI |
Description: ONSEMI - FCPF4300N80Z - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF4300N80Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 2.2A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FCPF4300N80Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 2.2A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |