Technische Details FCPF4300N80Z ON Semiconductor
Description: MOSFET N-CH 800V 1.6A TO220F, Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 4.5V @ 160µA, Power Dissipation (Max): 19.2W (Tc), Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote FCPF4300N80Z nach Preis ab 1.92 EUR bis 6.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FCPF4300N80Z | ON Semiconductor |
 Trans MOSFET N-CH 800V 2.2A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 954 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
FCPF4300N80Z | Fairchild Semiconductor |
Description: MOSFET N-CH 800V 1.6A TO220F Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 4.5V @ 160µA Power Dissipation (Max): 19.2W (Tc) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 931 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
FCPF4300N80Z | onsemi / Fairchild |
MOSFETs N-Channel SuperFET II MOSFET 800 V, 1.6 A, 4.3 O |
auf Bestellung 874 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
FCPF4300N80Z | onsemi |
Description: MOSFET N-CH 800V 1.6A TO220F Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 4.5V @ 160µA Power Dissipation (Max): 19.2W (Tc) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 983 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| FCPF4300N80Z | ONSEMI |
Description: ONSEMI - FCPF4300N80Z - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| FCPF4300N80Z |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 800V 2.2A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 800V 2.2A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 954 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 2.08 EUR |
| FCPF4300N80Z |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 1.6A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4.5V @ 160µA
Power Dissipation (Max): 19.2W (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 800V 1.6A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4.5V @ 160µA
Power Dissipation (Max): 19.2W (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 931 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 263+ | 2.27 EUR |
| FCPF4300N80Z |
|
Hersteller: onsemi / Fairchild
MOSFETs N-Channel SuperFET II MOSFET 800 V, 1.6 A, 4.3 O
MOSFETs N-Channel SuperFET II MOSFET 800 V, 1.6 A, 4.3 O
auf Bestellung 874 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.57 EUR |
| 10+ | 3.62 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.03 EUR |
| 1000+ | 2.01 EUR |
| 2000+ | 1.92 EUR |
| FCPF4300N80Z |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 1.6A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4.5V @ 160µA
Power Dissipation (Max): 19.2W (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 800V 1.6A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4.5V @ 160µA
Power Dissipation (Max): 19.2W (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 983 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.15 EUR |
| 10+ | 4 EUR |
| 100+ | 2.77 EUR |
| 500+ | 2.25 EUR |
| FCPF4300N80Z |
|
Hersteller: ONSEMI
Description: ONSEMI - FCPF4300N80Z - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: ONSEMI - FCPF4300N80Z - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.44 EUR |