FCPF7N60NT ON Semiconductor
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 150+ | 1.00 EUR |
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Technische Details FCPF7N60NT ON Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 6, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 3.4A, 10V, Power Dissipation (Max): 30.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V.
Weitere Produktangebote FCPF7N60NT nach Preis ab 2.27 EUR bis 5.44 EUR
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FCPF7N60NT | Hersteller : Fairchild Semiconductor |
 Description: POWER FIELD-EFFECT TRANSISTOR, 6Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 3.4A, 10V Power Dissipation (Max): 30.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V |
auf Bestellung 6433 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF7N60NT | Hersteller : onsemi / Fairchild |
MOSFET 600V N-Channel SupreMOS |
auf Bestellung 1109 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF7N60NT | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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FCPF7N60NT | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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FCPF7N60NT | Hersteller : onsemi |
Description: MOSFET N-CH 600V 6.8A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 3.4A, 10V Power Dissipation (Max): 30.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V |
Produkt ist nicht verfügbar |