FCU4300N80Z onsemi / Fairchild
| Anzahl | Preis |
|---|---|
| 16+ | 0.18 EUR |
| 48+ | 0.06 EUR |
| 115+ | 0.025 EUR |
| 1000+ | 0.012 EUR |
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Technische Details FCU4300N80Z onsemi / Fairchild
Description: MOSFET N-CH 800V 1.6A I-PAK, Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 4.5V @ 160µA, Power Dissipation (Max): 27.8W (Tc), Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.
Weitere Produktangebote FCU4300N80Z nach Preis ab 1.34 EUR bis 1.34 EUR
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FCU4300N80Z | Hersteller : Fairchild Semiconductor |
 Description: MOSFET N-CH 800V 1.6A I-PAKInput Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 4.5V @ 160µA Power Dissipation (Max): 27.8W (Tc) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCU4300N80Z | Hersteller : ON Semiconductor |
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auf Bestellung 8995 Stücke: Lieferzeit 21-28 Tag (e) |