FD6M043N08 ONSEMI
Hersteller: ONSEMIDescription: ONSEMI - FD6M043N08 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1404 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details FD6M043N08 ONSEMI
Description: MOSFET 2N-CH 75V 65A EPM15, Packaging: Tube, Package / Case: EPM15, Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 75V, Current - Continuous Drain (Id) @ 25°C: 65A, Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V, Rds On (Max) @ Id, Vgs: 4.3mOhm @ 40A, 10V, Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: EPM15.
Weitere Produktangebote FD6M043N08
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FD6M043N08 | Hersteller : onsemi |
Description: MOSFET 2N-CH 75V 65A EPM15 Packaging: Tube Package / Case: EPM15 Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 65A Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 40A, 10V Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: EPM15 |
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