FDB035AN06A0_F085 Fairchild Semiconductor
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Technische Details FDB035AN06A0_F085 Fairchild Semiconductor
Description: MOSFET N-CH 60V 22A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Ta), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V, Power Dissipation (Max): 310W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D²PAK (TO-263), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V.
Weitere Produktangebote FDB035AN06A0_F085
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDB035AN06A0_F085 | Hersteller : Fairchild Semiconductor |
 Description: MOSFET N-CH 60V 22A TO-263AB |
auf Bestellung 614 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB035AN06A0-F085 | Hersteller : ON Semiconductor / Fairchild |
MOSFET N-Chan PowerTrench MOSFET |
auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB035AN06A0_F085 | Hersteller : Fairchild Semiconductor |
Description: MOSFET N-CH 60V 22A TO-263AB |
auf Bestellung 29600 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB035AN06A0-F085 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 60V 22A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FDB035AN06A0-F085 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 22A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDB035AN06A0-F085 | Hersteller : onsemi |
Description: MOSFET N-CH 60V 22A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V |
Produkt ist nicht verfügbar |